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 SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
2SC2137
DESCRIPTION *With TO-3 package *High voltage ,high speed APPLICATIONS *Switching regulator applications *High speed DC-DC converter applications
PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Tmb-25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 80 175 -55~175 UNIT V V V A W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=500V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=5V IC=0.5A ; VCE=10V 10 MIN 400 500 7
2SC2137
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
TYP.
MAX
UNIT V V V
1.0 1.5 0.1 0.1 40 6
V V mA mA
MHz
2
SavantIC Semiconductor
www..com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2137
Fig.2 Outline dimensions
3


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